digital transistors (built-in resistors) dtc114tm/dtc114te/dtc114tua dtc114tka /DTC114TCA/dtc114tsa equivalent circuit digital transistor (npn) features ? built-in bias resistors enable the c onfiguration of an inverter circuit without connecting external input re sistors(see equivalent circuit) ? the bias resistors consist of thin-f ilm resistors with complete isolation to allow negative biasing of the input.they also have the advantage of almost completely eliminating parasitic effects ? only the on/off conditions need to be se t for operation, making device design easy pin connenctions and marking dtc114tm sot-723 1. in 2. gnd 3. out marking:04 dtc114te sot-523 1. in 2. gnd 3. out marking: 04 dtc114tua sot-323 1. in 2. gnd 3. out marking: 04 dtc114tka sot-23-3l 1. in 2. gnd 3. out marking: 04 DTC114TCA sot-23 1. in 2. gnd 3. out marking: 04 dtc114tsa to-92s 1. gnd 2. out 3. in 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification d,jun,2013
maximum ratings(ta= 25 unless otherwise noted) limits(dtc114t ) symbol parameter m e ua ka ca sa unit v cbo collector-base voltage 50 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current -continuous 100 ma p d power dissipation 100 150 200 200 200 300 mw t j junction temperature 150 t stg storage temperature -55 +150 electrical characteristics (ta= 25 unless otherwise specified) parameter symbol conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=50a,i e =0 50 v collector-emitter breakdown voltage v (br)ceo ic=1ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =50a,i c =0 5 v collector cut-off current i cbo v cb =50v,i e =0 0.5 emitter cut-off current i ebo v eb =4v,i c =0 0.5 collector-emitter saturation voltage v ce(sat) i c =10ma,i b =1ma 0.3 v dc current gain h fe v ce =5v,i c =1ma 100 300 600 input resistor r 1 7 10 13 k ? transition frequency f t v ce =10v,i e =-5ma, f=100mhz 250 mhz 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification d,jun,2013
0.1 1 10 100 10 100 1000 0.1 1 10 0.1 1 10 100 0.1 1 10 100 0.1 1 10 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 0.1 1 10 100 10 100 01234567 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.1 1 10 1 10 t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter vce= 5v base-emmiter voltage v be (v) collector current i c (ma) t a = 2 5 t a = 1 0 0 common emitter vce=5v i c ?? v be =10 base-emitter saturation voltage v besat (v) collector curremt i c (ma) i c v besat ?? 50 t a =100 t a =25 ambient temperature t a ( ) power dissipation p d (mw) p d ?? t a dtc114tm dtc114te DTC114TCA/tua/tka dtc114tsa t a =100 t a =25 =10 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector current i c (ma) 500 i c h fe ?? dtc114txx common emitter t a =25 static characteristic collector current i c (ma) collector-emitter voltage v ce (v) 10ua 9ua 8ua 7ua 6ua 5ua 4ua 3ua 2ua i b =1ua c ib c ob capacitance c t (pf) reverse voltage v (v) 30 20 f=1mhz i c =0/i e =0 t a =25 v cb /v eb c ob /c ib ?? 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification d,jun,2013
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